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May 1994
NDP508A / NDP508AE / NDP508B / NDP508BE NDB508A / NDB508AE / NDB508B / NDB508BE N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
19 and 17A, 80V. RDS(ON) = 0.08 and 0.10. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175C maximum junction temperature rating. High density cell design (3 million/in) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Voltage (RGS < 1 M) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25C Derate above 25C TJ,TSTG TL
TC = 25C unless otherwise noted
NDP508A NDP508AE NDB508A NDB508AE 80 80 20 40 19 57 75 0.5
NDP508B NDP508BE NDB508B NDB508BE
Units V V V V
17 51
A A W W/C C C
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
-65 to 175 275
(c) 1997 Fairchild Semiconductor Corporation
NDP508.SAM
Electrical Characteristics (T
Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanche Energy
C
= 25C unless otherwise noted)
Conditions VDD = 25 V, ID = 19 A
Type NDP508AE NDP508BE NDB508AE NDB508BE
Min
Typ
Max 55 19
Units mJ A
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0 V, ID = 250 A VDS = 80 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 9.5 A ALL ALL TJ = 125C ALL ALL ALL TJ = 125C NDP508A NDP508AE NDB508A TJ = 125C NDB508AE NDP508B NDP508BE NDB508B TJ = 125C NDB508BE NDP508A NDP508AE NDB508A NDB508AE NDP508B NDP508BE NDB508B NDB508BE gFS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, ID = 9.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL ALL ALL ALL DYNAMIC CHARACTERISTICS 19 2 1.4 2.9 2.3 0.057 0.097 80 250 1 100 -100 4 3.6 0.08 0.16 0.1 0.2 V A mA nA nA V V A
ON CHARACTERISTICS (Note 2)
VGS = 10 V, ID = 8.5 A
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 10 V
17
A
6
9.6 750 200 60 900 250 90
S pF pF pF
Ciss Coss Crss
NDP508.SAM
Electrical Characteristics (T
Symbol tD(ON) tr tD(OFF) tf Qg Qgs Qgd IS Parameter Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
C
= 25C unless otherwise noted)
Conditions VDD = 40 V, ID = 19 A, VGS = 10 V, RGEN = 15
Type ALL ALL ALL ALL
Min
Typ 8.5 66 31 48 23.5 4.5 11.8
Max 20 110 50 80 34
Units nS nS nS nS nC nC nC
SWITCHING CHARACTERISTICS (Note 2)
VDS = 64 V, ID = 19 A, VGS = 10 V
ALL ALL ALL NDP508A NDP508AE NDB508A NDB508AE NDP508B NDP508BE NDB508B NDB508BE
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current 19 A
17
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
NDP508A NDP508AE NDB508A NDB508AE NDP508B NDP508BE NDB508B NDB508BE
57
A
51
A
VSD
(Note 2)
Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current
VGS = 0 V, IS = 9.5 A VGS = 0 V, IS = 19 A, dIS/dt = 100 A/s
ALL TJ = 125C ALL ALL
0.87 0.79 78 5.2
1.3 1.2 110 75
V V ns A
trr Irr RJC RJA
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ALL ALL 2 62.5 C/W C/W
Notes: 1. NDP508A/508B and NDB508A/508B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
NDP508.SAM
Typical Electrical Characteristics
50 2
V GS = 20V
I D , DRAIN-SOURCE CURRENT (A) 40
12
R DS(on) , NORMALIZED
8.0
DRAIN-SOURCE ON-RESISTANCE
10
1.8 1.6 1.4
V GS = 6V 7.0 8.0 10
30
7.0
20
1.2 1 0.8 0.6 0 10 20 30 40 I D , DRAIN CURRENT (A)
12 20
6.0
10
5.0
0 0 1 2 3 4 V DS , DRAIN-SOURCE VOLTAGE (V) 5 6
50
60
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage and Drain Current.
2.5
2.5
DRAIN-SOURCE ON-RESISTANCE
I D = 9.5A
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
V G S = 10V
2 R DS(on), NORMALIZED
TJ = 125C
2
R DS(ON) , NORMALIZED
1.5
1.5
25C
1
1
-55C
0.5 0 10 20 30 40 50
0.5 -50
-25
0
25 50 75 100 125 TJ , JUNCTION TEMPERATURE (C)
150
175
ID , DRAIN CURRENT (A)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Drain Current and Temperature.
20
1.2
V DS = 10V
15
GATE-SOURCE THRESHOLD VOLTAGE (V)
TJ = -55C
25 125
V DS = V
1.1
GS
I D = 250 A
I D, DRAIN CURRENT (A)
Vth , NORMALIZED
1
10
0.9
0.8
5
0.7
0 2 3 V
GS
4
5
6
7
8
0.6 -50
-25
0
, GATE TO SOURCE VOLTAGE (V)
25 50 75 100 125 T J , JUNCTION TEMPERATURE (C)
150
175
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with Temperature.
NDP508.SAM
Typical Electrical Characteristics (continued)
1.15 DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
I D = 250A
1.1
50 30 I S , REVERSE DRAIN CURRENT (A) 10 5
VGS = 0V TJ = 125C 25C -55C
BV DSS , NORMALIZED
1.05
1
1
0.95
0.1
0.9 -50
-25
0 T J
25 50 75 100 125 , JUNCTION TEMPERATURE (C)
150
175
0.01 0.2
0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 7. Breakdown Voltage Variation with Temperature.
Figure 8. Body Diode Forward Voltage Variation with Current and Temperature.
20 V GS , GATE-SOURCE VOLTAGE (V)
1600 1000 CAPACITANCE (pF)
C iss
I D = 19A
15
V DS = 12V 24 64
500
C oss
200
10
100
5
f = 1 MHz VGS = 0V
1 2 3 5 10 20 VDS , DRAIN TO SOURCE VOLTAGE (V)
C rss
40
0
50
0
10
20 Q g , GATE CHARGE (nC)
30
40
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
VDD
t d(on)
t on tr
90%
t off t d(off)
90%
tf
V IN
D
RL V OUT
DUT
Output, Vout
VGS
10%
10% 90%
R GEN
Inverted
G
Input, Vin
S
10%
50%
50%
Pulse Width
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP508.SAM
Typical Electrical Characteristics (continued)
15 , TRANSCONDUCTANCE (SIEMENS)
T J = -55C
12
VGS = 10V
125C
L tp
+ VDD -
25C
9
6
t p is adjusted to reach the desired peak inductive current, I L . tp IL
20
BV DSS
3
FS
VDS = 10V
0 0 4 8 12 ID , DRAIN CURRENT (A) 16
VDD
g
Figure 13. Transconductance Variation with Drain Current and Temperature.
100 50
Figure 14. Unclamped Inductive Load Circuit and Waveforms.
RD
I , DRAIN CURRENT (A) 20 10
O S(
N)
Lim
it
10 10 1m 10 ms 0
s
s
s
5
VGS = 20V
2 1 0.5 1 2
DC
SINGLE PULSE T C = 25C
D
3 5 10 20 30 V GS , DRAIN-SOURCE VOLTAGE (V))
50
100
Figure 15. Maximum Safe Operating Area.
1 TRANSIENT THERMAL RESISTANCE 0.5 0.3
0.2 D = 0.5
r(t), NORMALIZED EFFECTIVE
0.2
0.1
R JC (t) = r(t) * RJC R = 2.0 C/W JC
0.1
0.05 P(pk)
0.05 0.03 0.02
0.02 0.01 Single Pulse
t1
t2
TJ - T C = P * RJC (t) Duty Cycle, D = t 1 /t2 0.1 1 t1 ,TIME (m s) 10 100 1000
0.01 0.01
Figure 16. Transient Thermal Response Curve.
NDP508.SAM

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